Journal
NANO LETTERS
Volume 14, Issue 9, Pages 5206-5211Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl5021409
Keywords
III-V semiconductors; nanowires; wurtzite; quantum efficiency; nanowire laser; selective-area metal-organic vapor-phase epitaxy
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Funding
- The Australian Research Council
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We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metalorganic vapor-phase epitaxy and experimentally determine a quantum efficiency of similar to 50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.
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