Journal
NANO LETTERS
Volume 15, Issue 1, Pages 641-648Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl504136c
Keywords
InP; metal-assisted chemical etching; MacEtch; inverse MacEtch; I-MacEtch; MACE; nanowires; finFET
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Funding
- NSF ECCS [1001928]
- International Institute for Carbon-Neutral Energy Research (I2CNER)
- Directorate For Engineering [1001928] Funding Source: National Science Foundation
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Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.
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