4.8 Article

GaAs Nanowire Array Solar Cells with Axial p-i-n Junctions

Journal

NANO LETTERS
Volume 14, Issue 6, Pages 3293-3303

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl500704r

Keywords

Nanowires; solar cells; gallium arsenide; axial junction; MOCVD

Funding

  1. Center for Energy Nanoscience (CEN), an Energy Frontier Research Center (EFRC) - U.S. Department of Energy, Office of Science and Office of Basic Energy Sciences [DE-SC0001013]
  2. USC Provost's Ph.D. Fellowship

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Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (V-oc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher V-oc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

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