4.8 Article

Reversible Switching of InP Nanowire Growth Direction by Catalyst Engineering

Journal

NANO LETTERS
Volume 13, Issue 8, Pages 3802-3806

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl401767b

Keywords

Semiconductor nanowires; indium phosphide; VLS; catalyst engineering growth direction

Funding

  1. Dutch Organization for Scientific Research (NWO)

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We demonstrate high yield vapor-liquid-solid (VLS) growth of (100)-oriented InP nanowire arrays. The highest yield (97%) is obtained when the catalyst droplet is filled with indium prior to nanowire nucleation to the equilibrium composition during nanowire growth. Using these < 100 > wires as a template we can reversibly switch between a < 100 > and a < 111 > growth direction by varying the indium content of the droplet. Modeling VLS growth by a kinetic nucleation model indicates that the growth direction is governed by the liquid-vapor interface energy that is strongly affected by the indium concentration in the catalyst droplet.

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