Journal
NANO LETTERS
Volume 13, Issue 4, Pages 1675-1680Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl400146u
Keywords
Heterostructure nanowires; silicon; germanium; interfacial abruptness; solvent vapor growth; aberration corrected STEM analysis
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Funding
- Science Foundation Ireland (SFI) [06/IN.1/I85]
- Advanced Biomimetic Materials for Solar Energy Conversion Strategic Research Cluster [07/SRC/B1160]
- Irish Government's Programme for Research in Third Level Institutions
- Irish Research Council for Science, Engineering and Technology (IRCSET) embark initiative
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The growth of Si/Ge axial heterostructure nanowires in high yield using a versatile wet chemical approach is reported. Heterostructure growth is achieved using the vapor zone of a high boiling point solvent as a reaction medium with an evaporated tin layer as the catalyst. The low solubility of Si and Ge within the Sn catalyst allows the formation of extremely abrupt heterojunctions of the order of just 1-2 atomic planes between the Si and Ge nanowire segments. The compositional abruptness was confirmed using aberration corrected scanning transmission electron microscopy and atomic level electron energy loss spectroscopy. Additional analysis focused on the role of crystallographic defects in determining interfacial abruptness and the preferential incorporation of metal catalyst atoms near twin defects in the nanowires.
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