Journal
NANO LETTERS
Volume 13, Issue 9, Pages 4362-4368Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl4021705
Keywords
Vertical nanowire; porous silicon nanowire; transfer printing; metal-assisted chemical etching; electropolishing; flexible electronics
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Funding
- Center of Integrated System at Stanford University
- 3M Nontenured Faculty Grant
- ONR/PECASE program
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An electroassisted method is developed to transfer silicon (Si) wire arrays from the Si wafers on which they are grown to other substrates while maintaining their original properties and vertical alignment. First, electroassisted etching is used to form a sacrificial porous Si layer underneath the Si wires. Second, the porous Si layer is separated from the Si wafer by electropolishing, enabling the separation and transfer of the Si wires. The method is further expanded to develop a current-induced metal-assisted chemical etching technique for the facile and rapid synthesis of Si nanowires with axially modulated porosity.
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