4.8 Article

Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire

Journal

NANO LETTERS
Volume 13, Issue 4, Pages 1399-1404

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl304157d

Keywords

InAs quantum dot; III-V branched nanowire; photoluminescence; single photon emitters

Funding

  1. National Key Basic Research Program of China [2013CB933304, 2010CB327601, 2012CB932701]
  2. National Natural Science Foundation of China [90921015, 61176012]
  3. Chinese Academy of Sciences [XDB01010200]

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We report a new type of single InAs quantum dot (QD) embedded at the junction of gold-free branched GaAs/AlGaAs nanowire (NW) grown on silicon substrate. The photoluminescence intensity of such QD is similar to 20 times stronger than that from randomly distributed QD grown on the facet of straight NW. Sharp excitonic emission is observed at 4.2 K with a line width of 101 mu eV and a vanishing two-photon emission probability of g(2)(0) = 0.031(2). This new nanostructure may open new ways for designing novel quantum optoelectronic devices.

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