Journal
NANO LETTERS
Volume 12, Issue 5, Pages 2266-2271Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl204537d
Keywords
Nanowire; Raman; modeling; FDTD; optical properties
Categories
Funding
- Department of Energy, Office of Basic Energy Sciences [DE-FG02-07ER46401]
- Northwestern University MRSEC under NSF [DMR-0520513, DMR-1121262]
- National Council for Science and Technology (Mexico)
- Camille and Henry Dreyfus Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1121262] Funding Source: National Science Foundation
- U.S. Department of Energy (DOE) [DE-FG02-07ER46401] Funding Source: U.S. Department of Energy (DOE)
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Diameter-dependent Raman scattering in single tapered silicon nanowires is measured and quantitatively reproduced by modeling with finite-difference time-domain simulations. Single crystal tapered silicon nanowires were produced by homoepitaxial radial growth concurrent with vapor-liquid-solid axial growth. Multiple electromagnetic resonances along the nanowire induce broad band light absorption and scattering. Observed Raman scattering intensities for multiple polarization configurations are reproduced by a model that accounts for the internal electromagnetic mode structure of both the exciting and scattered light. Consequences for the application of Stokes to anti-Stokes intensity ratio for the estimation of lattice temperature are discussed.
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