Journal
NANO LETTERS
Volume 12, Issue 11, Pages 5890-5896Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl303294k
Keywords
Nanowires; lead sulfide; doping; field effect transistors; scanning photocurrent microscopy; carrier diffusion length
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Funding
- U.C. Davis Startup fund
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [2011-0011883]
- Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]
- National Research Foundation of Korea [2011-0011883] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report a simple, controlled doping method for achieving n-type, intrinsic, and p-type lead sulfide (PbS) nanowires (NWs) grown by chemical vapor deposition without introducing any impurities. A wide range of carrier concentrations is realized by adjusting the ratio between the Pb and S precursors. The field effect electron mobility of n-type PbS NWs is up to 660 cm(2)/(V s) at room temperature, in agreement with a long minority carrier diffusion length measured by scanning photocurrent microscopy (SPCM). Interestingly, we have observed a strong dependence of minority carrier diffusion length on gate voltage, which can be understood by considering a carrier concentration dependent recombination lifetime. The demonstrated ambipolar doping of high quality PbS NWs opens up exciting avenues for their applications in photodetectors and photovoltaics.
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