Journal
NANO LETTERS
Volume 11, Issue 3, Pages 1127-1130Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl104032s
Keywords
InP; nanowire; wrap gate; Fermi level tuning; ambipolar
Categories
Funding
- Swedish Research Council (VR)
- Swedish Foundation for Strategic Research (SSF)
- Knut and Alice Wallenberg Foundation (KAW)
Ask authors/readers for more resources
As downscaling of semiconductor devices continues, one or a few randomly placed dopants may dominate the characteristics. Furthermore, due to the large surface-to-volume ratio of one-dimensional devices, the position of the Fermi level is often determined primarily by surface pinning, regardless of doping level. In this work, we investigate the possibility of tuning the Fermi level dynamically with wrap-around gates, instead of statically setting it using the impurity concentration. This is done using Omega-gated metal-oxide-semiconductor field-effect transistors with HfO2-capped InP nanowires as channel material. It is found that induced n-type devices exhibit an optimal inverse subthreshold slope of 68 mV/decade. By adjusting the growth and process parameters, it is possible to produce ambipolar devices, in which the Fermi level can be tuned across the entire band gap, making it possible to induce both n-type and p-type conduction.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available