4.8 Article

Generation of Highly n-Type Titanium Oxide Using Plasma Fluorine Insertion

Journal

NANO LETTERS
Volume 11, Issue 2, Pages 751-756

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl1039378

Keywords

Titanium oxide; oxide doping; transport; fluorine; surface conduction

Funding

  1. Helios Solar Energy Research Center [DE-AC02-05CH11231]
  2. U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DEFG0297ER4S624]

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True n-type doping of titanium oxide without formation of midgap states would expand the use of metal oxides for charge-based devices. We demonstrate that plasma-assisted. fluorine insertion passivates defect States and that fluorine acts as an n-type donor in titanium oxide. This enabled us to modify the Fermi level and transport properties of titanium oxide outside the hits of O vacancy doping. The origin of the electronic structure modification is explained by ab initio calculation.

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