Journal
NANO LETTERS
Volume 11, Issue 4, Pages 1483-1489Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl1041512
Keywords
Nanowires; polytypes; crystal structure; X-ray diffraction; density functional theory
Categories
Funding
- FWF Vienna [SFB025 IR-ON]
- EC [214814, 226716, 211956]
- Nanometer Structure Consortium at Lund University (nmC@LU)
- Swedish Foundation for Strategic Research (SSF)
- Swedish Research Council (VR)
- Knut and Alice Wallenberg Foundation
- Austrian Science Fund (FWF) [F 2506, F 2507] Funding Source: researchfish
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The atomic distances in hexagonal polytypes of III-V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tend to strech the distances of atomic layers parallel to the c-axis and to reduce the in-plane distances compared to those in zinc blende. The change of the lattice parameters scales linearly with the hexagonality of the polytype, defined as the fraction of bilayers with hexagonal character within one unit cell.
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