Realizing Lateral Wrap-Gated Nanowire FETs: Controlling Gate Length with Chemistry Rather than Lithography

Title
Realizing Lateral Wrap-Gated Nanowire FETs: Controlling Gate Length with Chemistry Rather than Lithography
Authors
Keywords
-
Journal
NANO LETTERS
Volume 12, Issue 1, Pages 1-6
Publisher
American Chemical Society (ACS)
Online
2011-02-16
DOI
10.1021/nl104403g

Ask authors/readers for more resources

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now