Piezoelectric Potential Gated Field-Effect Transistor Based on a Free-Standing ZnO Wire

Published 2009 View Full Article

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Title
Piezoelectric Potential Gated Field-Effect Transistor Based on a Free-Standing ZnO Wire
Authors
Keywords
-
Journal
NANO LETTERS
Volume 9, Issue 10, Pages 3435-3439
Publisher
American Chemical Society (ACS)
Online
2009-09-09
DOI
10.1021/nl901606b

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