Journal
NANO LETTERS
Volume 8, Issue 12, Pages 4459-4463Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl802406d
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Funding
- NANOMAT program [182091]
- Norwegian-French AURORA program [187692]
- Research Council of Norway
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We have demonstrated the growth of a unique wurtzite (WZ) GaAs nanowire (NW) with a zinc blende (ZB) GaAsSb insert by Au-assisted molecular beam epitaxy. An abrupt interface from the WZ GaAs phase to the ZB GaAsSb phase was observed, whereas an intermediate segment of a 4H polytype GaAs phase was found directly above the ZB GaAsSb insert. A possible mechanism for the different phase transitions is discussed. Furthermore, low temperature, microphotoluminescence (mu-PL) measurements showed evidence of quantum confinement of holes in the GaAsSb insert.
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