Journal
MRS BULLETIN
Volume 39, Issue 4, Pages 336-341Publisher
CAMBRIDGE UNIV PRESS
DOI: 10.1557/mrs.2014.56
Keywords
He; Ne; Si; Ga; microstructure; nanostructure; ion-solid interactions; ion-beam assisted deposition; ion-implantation; lithography (removal); ion-beam processing
Funding
- Argonne National Laboratory Center for Nanoscale Materials, US Department of Energy, Office of Science, Office of Basic Energy Sciences User Facility [DE-AC02-06CH11357]
- NanoNextNL, a micro and nanotechnology consortium of the Government of the Netherlands
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Over the last few years, significant improvements in sources, columns, detectors, control software, and accessories have enabled a wealth of new focused ion beam applications. In addition, modeling has provided many insights into ion-sample interactions and the resultant effects on the sample. With the knowledge gained, the community has found new ion-beam induced chemistries and ion-beam sources, allowing extending nanostructure fabrication and material deposition to smaller dimensions and better control for direct write and patterning. Insignificant proximity effects in resist-based ion beam lithography, combined with the availability of sub-nm ion spot sizes, opens the way to sub-10 nm structures and dense patterns. Additionally, direct-write ion beam nanomachining can process multilevel structures with arbitrary depths in one single process step, with all the information included in a single standard design file, thus enabling fabrication applications not achievable with any other technique.
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