Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31μm

Published 2015 View Full Article

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Title
Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31μm
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 30, Issue 10, Pages 105033
Publisher
IOP Publishing
Online
2015-09-21
DOI
10.1088/0268-1242/30/10/105033

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