Comparison of composition and atomic structure of amorphous indium gallium zinc oxide thin film transistor before and after positive bias temperature stress by transmission electron microscopy

Published 2015 View Full Article

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Title
Comparison of composition and atomic structure of amorphous indium gallium zinc oxide thin film transistor before and after positive bias temperature stress by transmission electron microscopy
Authors
Keywords
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Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 30, Issue 5, Pages 055008
Publisher
IOP Publishing
Online
2015-04-07
DOI
10.1088/0268-1242/30/5/055008

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