Journal
MOLECULAR CRYSTALS AND LIQUID CRYSTALS
Volume 566, Issue -, Pages 13-17Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/15421406.2012.703812
Keywords
Surface selectively deposition; organic single crystals; organic field-effect transistor; solvent-vapor annealing
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A method for patterning organic single-crystal transistor arrays via surface selective deposition is presented. Solvent-vapor annealing is applied for the formation of organic crystals under ambient conditions. The devices are fabricated with a dual-gate structure, which allows the investigation of device performances of bottom-gate/top-contact (BG/TC) and top-gate/top-contact (TG/TC) structures based on the same crystals. The resulting BG/TC devices exhibit the field-effect mobility (mu(FET)) up to 3.5 cm(2)/Vs. And mu(FET) is influenced by the contact resistance, resulting in large variation in device performance. On the other hand, TG/TC structure exhibits better performance with smaller variation. The highest mu(FET) is 7.4 cm(2)/Vs.
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