MECHANISM STUDY ON OXYGEN VACANCY INDUCED RESISTANCE SWITCHING IN Au/LaMnO3/SrNb0.01Ti0.99O3

Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories

(2012) Zhong-tang Xu et al.   Small

Resistance state-dependent barrier inhomogeneity and transport mechanisms in resistive-switching Pt/SrTiO3 junctions

(2011) Eunsongyi Lee et al.   APPLIED PHYSICS LETTERS

High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed $\hbox{SrZrO}_{3}$ Memory Devices

(2011) Meng-Han Lin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

(2010) L. Goux et al.   APPLIED PHYSICS LETTERS

Electrically Driven Redox Process in Cerium Oxides

(2010) Peng Gao et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer

(2010) Sheng-Yu Wang et al.   NANOTECHNOLOGY

Mechanism for bipolar resistive switching in transition-metal oxides

(2010) M. J. Rozenberg et al.   PHYSICAL REVIEW B

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4Thin Films

(2009) Keisuke Shibuya et al.   ADVANCED MATERIALS

Oxygen electromigration induced nonvolatile resistance switching at Ag/La2CuO4+x interface

(2009) J. P. Shi et al.   APPLIED PHYSICS LETTERS

Enhanced transport properties in LaxMnO3−δ thin films epitaxially grown on SrTiO3 substrates: The profound impact of the oxygen content

(2009) P. Orgiani et al.   APPLIED PHYSICS LETTERS

Metal-insulator transition induced by postdeposition annealing in low doped manganite films

(2009) M. Sirena et al.   JOURNAL OF APPLIED PHYSICS

First-principles investigations of structural, electronic and magnetic properties of cubic LaMnO3

(2009) M. Dine El Hannani et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Mechanism for bipolar switching in aPt/TiO2/Ptresistive switching cell

(2009) Doo Seok Jeong et al.   PHYSICAL REVIEW B

Trap-controlled space-charge-limited current mechanism in resistance switching at Al∕Pr0.7Ca0.3MnO3 interface

(2008) T. Harada et al.   APPLIED PHYSICS LETTERS

Theoretical study on the transport property of p-Si∕n-SrTiO3−δ

(2008) Chun-lian Hu et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?

(2008) G. I. Meijer   SCIENCE