GLANCING ANGLE REACTIVE PULSED LASER DEPOSITION (GRPLD) FOR Bi2O3/Si HETEROSTRUCTURE

Thin films of micro bismuth oxide particles were successfully prepared by in situ oxidation of the laser ablated bismuth metal. (111) oriented p-type crystalline silicon substrates were used. The effects of substrate tiled angle on the characteristics of the prepared film were studied. Also, the performance of n-Bi2O3/p-Si heterojunction device was investigated. The obtained current-voltage characteristics in dark and under illumination insure the dependence of the fabricated device characteristic on the deposition angle. The I-V characteristics show that all prepared devices are of abrupt type.