Journal
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING
Volume 17, Issue 5, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0965-0393/17/5/055008
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Funding
- European Commission [016710]
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An atomistic simulation methodology is presented in which well-defined dislocation loops can be introduced on arbitrary slip-systems of nanocrystalline (nc) grains. This approach allows one to study loop expansion and deposition of dislocation segments into the surrounding grain boundaries (GBs) at finite temperature. Such a dislocation loop creation method is intended to aid in the systematic study of the dislocation/GB interaction within a fully three-dimensional GB network geometry, and will also facilitate the atomistic study of the pile-up phenomenon as a function of GB misorientation.
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