Journal
MICROELECTRONICS JOURNAL
Volume 43, Issue 5, Pages 300-304Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mejo.2011.12.002
Keywords
Nanowire FETs; SRAM; SNM
Funding
- National Science Council of Taiwan [NSC100-2628-E-197-003-MY2]
- National Center for High-performance Computing (NCHC)
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Impact of device structure variability of silicon nanowire FETs is assessed and SRAM design implication is presented based on 3-D numerical simulation. Both the conventional and junctionless nanowire FETs are shown to be sensitive to structural variation whereas the former is more tolerable. Both the circular wire and non-circular wire cases for feasible SRAM design with a focus on read/write noise margin are included in our study. (c) 2011 Elsevier Ltd. All rights reserved.
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