3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity

Published 2008 View Full Article

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Title
3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
Authors
Keywords
-
Journal
MICROELECTRONICS JOURNAL
Volume 40, Issue 4-5, Pages 756-758
Publisher
Elsevier BV
Online
2008-12-26
DOI
10.1016/j.mejo.2008.11.009

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