Journal
MICROELECTRONIC ENGINEERING
Volume 112, Issue -, Pages 273-277Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2013.03.117
Keywords
Nanoimprint lithography; Roll-to-roll; High throughput; High-aspect-ratio pattern; Release agent
Categories
Funding
- Grants-in-Aid for Scientific Research [25420067] Funding Source: KAKEN
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Nanoimprint lithography (NIL) has proven to be an effective technique for fabricating nanopatterns, particularly in the case of roll-to-roll (RTR) imprint technology, which delivers high throughput, high resolution and cost-effectiveness. Since the first reports on RTR-NIL, research on this technology has expanded to include pattern transfer techniques, roll mold fabrication processes, and various RTR-NIL methods. However, a high-aspect-ratio line-and-space (L&S) pattern is difficult to transfer by RTR-NIL because the lines often stick together. To solve this problem, we developed a technique using sufficiently tough replica molds for high-aspect-ratio L&S pattern transfer. We also developed the material used for the UV-curable resin of the replica mold. In this study, a silicon master mold was used for the fabrication of the replica mold. The replica mold was wrapped around the roll mold, which was used for high throughput (18 m/min) RTR UV-NIL The results confirmed that a high-aspect-ratio L&S pattern can be transferred via RTR UV-NIL, and this technology can be applied to wire-grid polarizers, flexible displays and solar panels. (C) 2013 Elsevier B.V. All rights reserved.
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