Journal
MICROELECTRONIC ENGINEERING
Volume 109, Issue -, Pages 10-12Publisher
ELSEVIER
DOI: 10.1016/j.mee.2013.03.108
Keywords
GaN; C-V; TMAH; MOS; Al2O3
Categories
Funding
- Kyungpook National University
- Brain Korea 21 (BK21)
- National Research Foundation of Korea (NRF)
- Korea government (MEST) [2012-0005671, 2012-0000627]
- MKE/KETEP [2011101050017B]
- WCU (World Class University) program through the Korea Science and Engineering Foundation
- Ministry of Education, Science and Technology [R33-10055]
- MKE/KEIT [10038766]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10038766] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The effect of surface treatment on the interfacial properties between the Al2O3 gate dielectric and the recess-etched GaN surface of the AlGaN/GaN-based MOSFET has been characterized by capacitance-voltage (C-V) measurements. The recessed GaN surface was treated in the tetramethylammonium hydroxide (TMAH) solution at 85 degrees C for 10 min to smoothen the surface and remove the plasma damage. The surface treatment decreases the interface trap density by removing surface traps related to the native surface oxide such as GaxOy, which results in much improved C-V characteristics. (C) 2013 Elsevier B.V. All rights reserved.
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