Journal
MICROELECTRONIC ENGINEERING
Volume 88, Issue 8, Pages 1968-1971Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2010.12.037
Keywords
Ion sources; Reactive ion etching
Categories
Funding
- SESAME [1377]
- Region Ile de France
- Conseil General de l'Essonne
Ask authors/readers for more resources
In this article the authors report on ionic liquid ion sources (ILISs) for silicon reactive machining and direct microfabrication of silicon structures. The authors have developed a specific source geometry using the ionic liquid EMI-BF4 to obtain stable emission currents up to the 10 mu A regime. ILIS EMI-BF4 engraving properties were then investigated in low and high current regime showing very different etching characteristics. The results and the chemical analysis of the patterned substrates suggest that reactive ion species can be generated from ILIS. This possibility is of major interest to allow decisive advances in the field of focused ion beam applications. (C) 2010 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available