Journal
MICROELECTRONIC ENGINEERING
Volume 88, Issue 11, Pages 3327-3332Publisher
ELSEVIER
DOI: 10.1016/j.mee.2011.08.011
Keywords
CMP; Multi-zone; Retaining ring; Contact stress; Material removal rate; Within wafer non-uniformity
Categories
Funding
- National Science Fund for Distinguished Young Scholars [50825501]
- Science Fund for Creative Research Groups [51021064]
- National Science and Technology Major Project [2008ZX02104-001]
Ask authors/readers for more resources
In this paper, the contact stress distribution on the wafer surface in multi-zone CMP is investigated using finite-element analysis based on a 12-in, and four-zone CMP model. Afterwards, a 12-in, and four-zone polishing head with the same size as the numerical model is developed and CMP experiments are carried out to verify the above numerical calculations. The results show that both the contact stress on the wafer surface and the material removal rate of the wafer can be adjusted by varying the applied load at the zones and the retaining ring in multi-zone CMP, the multi-zone MRR model appears to agree well with the experimental data, and the non-uniformity material removal rate of the wafer can be improved in multi-zone CMP. It is expected that this investigation can give some direct assistance to the 12-in, wafer fab. (C) 2011 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available