Physical analysis of breakdown in high-κ/metal gate stacks using TEM/EELS and STM for reliability enhancement (invited)

Published 2011 View Full Article

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Title
Physical analysis of breakdown in high-κ/metal gate stacks using TEM/EELS and STM for reliability enhancement (invited)
Authors
Keywords
-
Journal
MICROELECTRONIC ENGINEERING
Volume 88, Issue 7, Pages 1365-1372
Publisher
Elsevier BV
Online
2011-04-12
DOI
10.1016/j.mee.2011.03.012

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