Epitaxial strontium oxide layers on silicon for gate-first and gate-last TiN/HfO2 gate stack scaling

Published 2011 View Full Article

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Title
Epitaxial strontium oxide layers on silicon for gate-first and gate-last TiN/HfO2 gate stack scaling
Authors
Keywords
-
Journal
MICROELECTRONIC ENGINEERING
Volume 88, Issue 7, Pages 1312-1316
Publisher
Elsevier BV
Online
2011-04-15
DOI
10.1016/j.mee.2011.03.070

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