Journal
MICROELECTRONIC ENGINEERING
Volume 87, Issue 11, Pages 2407-2410Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2010.04.015
Keywords
Si nanowires; High-k HfO2 dielectric; Electroless etching method; Field-effect transistor; Electrical transport
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Funding
- Korea government (MOST) [R01-2007-000-20143-0]
- National Research Foundation of Korea [R01-2007-000-20143-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report the electrical transport of the Si nanowires in a field-effect transistor (FET) configuration, which were synthesized from B-doped p-type Si(1 1 1) wafer by an aqueous electroless etching method based on the galvanic displacement of Si by the reduction of Ag+ ions on the wafer surface. The FET performance of the as-synthesized Si nanowires was investigated and compared with Ag-nanoparticles-removed Si nanowires. In addition, high-k HfO2 gate dielectric was applied to the Si nanowires FETs, leading to the enhanced performance such as higher drain current and lower subthreshold swing. (C) 2010 Elsevier B.V. All rights reserved.
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