Effect of fluorinated silicate glass passivation layer on electrical characteristics and dielectric reliabilities for the HfO2/SiON gate stacked nMOSFET

Title
Effect of fluorinated silicate glass passivation layer on electrical characteristics and dielectric reliabilities for the HfO2/SiON gate stacked nMOSFET
Authors
Keywords
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Journal
MICROELECTRONIC ENGINEERING
Volume 87, Issue 11, Pages 2241-2246
Publisher
Elsevier BV
Online
2010-03-10
DOI
10.1016/j.mee.2010.02.010

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