Experimental evidence of suppression on oxygen vacancy formation in Hf based high-κ gate dielectrics with La incorporation

Published 2009 View Full Article

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Title
Experimental evidence of suppression on oxygen vacancy formation in Hf based high-κ gate dielectrics with La incorporation
Authors
Keywords
-
Journal
MICROELECTRONIC ENGINEERING
Volume 86, Issue 7-9, Pages 1703-1706
Publisher
Elsevier BV
Online
2009-03-14
DOI
10.1016/j.mee.2009.03.047

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