Thermal annealing effect on electrical properties of metal nitride gate electrodes with hafnium oxide gate dielectrics in nano-metric MOS devices

Published 2007 View Full Article

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Title
Thermal annealing effect on electrical properties of metal nitride gate electrodes with hafnium oxide gate dielectrics in nano-metric MOS devices
Authors
Keywords
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Journal
MICROELECTRONIC ENGINEERING
Volume 85, Issue 1, Pages 202-209
Publisher
Elsevier BV
Online
2007-06-05
DOI
10.1016/j.mee.2007.05.041

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