Journal
MICROELECTRONIC ENGINEERING
Volume 85, Issue 8, Pages 1754-1757Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2008.04.038
Keywords
modeling; spontaneous wafer bonding; nano-scale roughness; low temperature
Categories
Funding
- National Major Fundamental Research Program of China [2003CB716207]
- National Natural Science Foundation of China [50775090]
Ask authors/readers for more resources
Low temperature wafer direct bonding is one of critical technologies in micro/nano fabrication. in this study, a description of interfacial requirements for spontaneous wafer direct bonding under low temperature is proposed. The model relates the occurrence of bonding to interfacial adhesion energy, interfacial nano-topography and elasticity of wafers. Its derivation is based on Johnson-Kendall-Roberts (JKR) theory and a competition between the bonding energy and the deformation of interfacial micro/nano-roughness. The analysis identifies three bonding possibilities, namely spontaneous bonding without voids, spontaneous bonding with voids, and bonding under external pressure with gap or un-bondable. To verify the model, experiments were carried out for silicon wafers with different surface nano-scale roughness. (C) 2008 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available