Breakdown characteristics of nFETs in inversion with metal/HfO2 gate stacks

Published 2007 View Full Article

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Title
Breakdown characteristics of nFETs in inversion with metal/HfO2 gate stacks
Authors
Keywords
-
Journal
MICROELECTRONIC ENGINEERING
Volume 85, Issue 1, Pages 27-35
Publisher
Elsevier BV
Online
2007-02-05
DOI
10.1016/j.mee.2007.01.173

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