Journal
METALS AND MATERIALS INTERNATIONAL
Volume 20, Issue 3, Pages 565-569Publisher
KOREAN INST METALS MATERIALS
DOI: 10.1007/s12540-014-3001-x
Keywords
thin films; optical properties; atomic force microscopy (AFM); sputtering; solar cells
Funding
- Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Korea government Ministry of Trade, Industry and Energy [20124010203280]
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ITO and ITO:Zr films with various thicknesses were prepared on glass substrates by RF magnetron sputtering. We observed a decrease in sheet resistance with increasing film thickness that in good agreement with Fuchs-Sondheimer theory. The ITO films doped with ZrO2 (similar to 0.2 wt%) showed improvement in some of the electrical and optical properties of ITO films. The surface roughness of ITO:Zr films increased with increasing film thickness. ITO:Zr films with thickness of 120 nm showed highest work function of 5.13 eV, as estimated from XPS data. The ITO:Zr films were employed as front electrodes in HIT solar cells; the best device performance was found to be: V-oc = 710 mV, J(sc) = 34.44 mA/cm(2), FF = 74.8%, eta = 18.30% at a thickness of 120 nm. A maximum quantum efficiency (QE) of 89% was recorded for HIT solar cells at a wavelength of 700 nm for 120 nm thick ITO:Zr films.
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