Effects of defects generated in ALD TiO2 films on electrical properties and interfacial reaction in TiO2/SiO2/Si system upon annealing in vacuum

Published 2010 View Full Article

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Title
Effects of defects generated in ALD TiO2 films on electrical properties and interfacial reaction in TiO2/SiO2/Si system upon annealing in vacuum
Authors
Keywords
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Journal
METALS AND MATERIALS INTERNATIONAL
Volume 14, Issue 6, Pages 759-765
Publisher
Springer Nature
Online
2010-02-24
DOI
10.3365/met.mat.2008.12.759

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