Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC

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Title
Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC
Authors
Keywords
-
Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 16, Issue 5, Pages 1336-1345
Publisher
Elsevier BV
Online
2012-12-21
DOI
10.1016/j.mssp.2012.10.014

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