Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 11, Issue 3, Pages 100-105Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2009.04.003
Keywords
Microwave plasma CVD; h-BCN; Near-edge X-ray absorption fine structure; Synchrotron radiation
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In order to synthesize oriented hexagonal boron carbonitride (h-BCN) films, borane-triethylamine complex (C6H18BN) was used as a single-source precursor. The films were deposited on Si (100) substrate by microwave plasma-enhanced chemical-vapor deposition using CH4+H-2 as the carrier gas. The deposition was performed at different microwave powers of 200-500W at working pressure of 5.0 Torr. The microhardness, estimated by nano-indentation test, of the films was found to be around 4GPa. Fourier transform infrared spectroscopy (FT-IR) confirmed the formation of hexagonal BCN phase in a short-range order. The chemical composition and the local structures of films were studied by X-ray photoelectron spectroscopy (XPS) and the near-edge X-ray absorption fine structure (NEXAFS) spectroscopic measurements. XPS revealed that B, C and N atoms in the deposited films are in various chemical environments such as B-N, B-C, C-N and B-C-N atomic hybrid configuration. The NEXAFS measurement suggested that the B atoms are bonded not only to the N atoms but also to the C atoms to form various local structures of sp(2) B-C-N hybrid configurations. The polarization dependence of NEXAFS suggested that the local structures of the sp(2) BCN layers have different atomic orientations to the substrate. (C) 2009 Elsevier Ltd. All rights reserved.
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