Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 11, Issue 1, Pages 20-24Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2008.07.001
Keywords
Polycrystalline silicon; Dislocations; Oxygen precipitation; EBIC; Carrier lifetime
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Carrier lifetime limitation defects in polycrystalline silicon ribbons have been examined in samples with high oxygen and carbon content. infrared spectroscopy showed that essentially all supersaturated oxygen impurities precipitated within 1 h annealing at over 800 degrees C. Preferential defect etching revealed that a much higher density of oxygen precipitates were generated in dislocation-free grains than in those highly dislocated (10(5)-10(7) cm(-2)) ones. Correlated with electron-beam-induced current imaging, we found that oxygen precipitates are the dominant carrier recombination defects in dislocation-free grains, while dislocations are the lifetime killer for highly dislocated grains. It is suggested that eliminating dislocations alone will not improve the carrier lifetime, considering that a higher density of oxygen precipitates formed in the absence of dislocation-related heterogeneous nucleation sites will significantly degrade the carrier lifetime. (c) 2008 Elsevier Ltd. All rights reserved.
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