Journal
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
Volume 167, Issue 2, Pages 91-96Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mseb.2010.01.046
Keywords
Porous silicon; Different porosity; Surface modification; Palladium; Morphology; Electrical characterization
Funding
- Council of Scientific and Industrial Research (CSIR), Govt. of India
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Porous silicon (PS) was formed on p-type crystalline silicon of (100) orientation and 2-5 Omega cm resistivity by the electrochemical anodization method using HF and ethanol as the electrolyte. Adjusting the current density and the HF concentration in the electrolyte the porosity of the samples were varied from 40% to 60%. The porous silicon surface was modified with PdCl2 solution by a low cost chemical method. Both the unmodified and the modified PS were thoroughly characterized by the EDAX analysis, the digital X-ray image mapping and the XPS study. Electrical characteristics were performed by the I-V measurements for both the lateral and the sandwich structures using Al metal contact. The I-V characteristics of the modified PS for all the porosity were more reproducible compared to the unmodified PS surfaces. It was further observed that the conductivity increased with the increasing porosity for the Pd-modified surfaces whereas it decreased for the unmodified PS. (C) 2010 Elsevier B.V. All rights reserved.
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