Journal
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
Volume 528, Issue 3, Pages 1628-1635Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.msea.2010.10.109
Keywords
Abnormal grain growth; Pulsed laser deposited Ni; Electron microscopy; Annealing
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Funding
- US Department of Energy Office of Basic Energy Sciences, Division of Materials Science [DEFG-02-07ER46443]
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
- Division of Materials Science and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy at Sandia
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Grain boundary migration associated with abnormal grain growth in pulsed-laser deposited Ni was studied in real time by annealing electron transparent films in situ in the transmission electron microscope. The resulting texture evolution and grain boundary types produced were evaluated by ex situ electron backscatter diffraction of interrupted anneals. The combination of these two techniques allowed for the investigation of grain growth rates, grain morphologies, and the evolution of the orientation and grain boundary distributions. Grain boundaries were found to progress in a sporadic, start/stop fashion with no evidence of a characteristic grain growth rate. The orientations of the abnormally growing grains were found to be predominately < 1 1 1 >//ND throughout the annealing process. A high fraction of twin boundaries developed during the annealing process. The intermittent growth from different locations of the grain boundary is discussed in terms of a vacancy diffusion model for grain growth. (C) 2010 Elsevier B.V. All rights reserved.
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