Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature

Published 2012 View Full Article

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Title
Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature
Authors
Keywords
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Journal
MATERIALS RESEARCH BULLETIN
Volume 47, Issue 10, Pages 2923-2926
Publisher
Elsevier BV
Online
2012-04-26
DOI
10.1016/j.materresbull.2012.04.134

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