Growth of c-plane ZnO on γ-LiAlO2 (100) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy

Published 2015 View Full Article

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Title
Growth of c-plane ZnO on γ-LiAlO2 (100) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy
Authors
Keywords
A3. Molecular beam epitaxy, A3. Buffer layer, B1. ZnO, B1. LiAlO, 2, B1. GaN
Journal
APPLIED SURFACE SCIENCE
Volume 351, Issue -, Pages 824-830
Publisher
Elsevier BV
Online
2015-06-12
DOI
10.1016/j.apsusc.2015.06.011

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