4.4 Article

Diode-pumped passively mode-locked Nd:GGG laser at 1331.3 nm

Journal

LASER PHYSICS LETTERS
Volume 9, Issue 7, Pages 481-484

Publisher

IOP PUBLISHING LTD
DOI: 10.7452/lapl.201210022

Keywords

Nd:GGG crystal; passive mode-locking; SESAM; diode-pumped

Funding

  1. National Natural Science Foundation of China [11074148, 91022003, 51021062]
  2. 863 program of China [2010AA0301587003]
  3. Technology development Program of Shandong Province [2011GGH20210]

Ask authors/readers for more resources

The performance of the passively continuous-wave mode-locked Nd-doped gadolinium gallium garnet (Nd:GGG) laser at 1331.3 nm with a semiconductor saturable absorber mirror (SESAM) was investigated for the first time to our knowledge. At the absorbed pumped power of 5.36 W, an average output power of 467 mW was obtained with a slope efficiency of 10%. The minimum pulse duration was measured to be 5 ps with a repetition rate of 33 MHz. [GRAPHICS] (C) 2012 by Astro, Ltd.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.4
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available