Journal
LASER PHYSICS LETTERS
Volume 8, Issue 8, Pages 559-568Publisher
IOP PUBLISHING LTD
DOI: 10.1002/lapl.201110025
Keywords
Pr:YAlO3; diode-pumping; GaN diode; microchip configuration; Lyot tuning; frequency doubling
Categories
Funding
- Czech Ministry of Education [MSM 6840770022]
Ask authors/readers for more resources
Spectroscopic properties and laser output results of Pr-doped YAlO3 material under 1-W GaN-laser-diode pumping at various resonator arrangement (linear, V-folded, and microchip configuration) are reviewed and compared. Continuous output power of up to 140 mW in the near-infrared spectral range at 747 nm wavelength as well as 45% slope efficiency (with respect to absorbed pump power) and intracavity frequency doubling resulting in 12.3 mW blue emission is reported. (C) 2011 by Astro Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
