Journal
LASER & PHOTONICS REVIEWS
Volume 8, Issue 2, Pages L23-L28Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/lpor.201300176
Keywords
mid-infrared; III-V semiconductors; Integrated optics; CMOS-compatible
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Funding
- Defense Threat Reduction Agency [HDTRA1-10-1-0101, HDTRA1-13-1-0001]
- U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-06CH11357]
- Defense Advanced Research Projects Agency (DARPA)
- Packard Fellowship in Science and Engineering
- National Science Foundation
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Mid-infrared (mid-IR) microphotonic devices including (i) straight/bent waveguides and (ii) Y-junction beam splitters are developed on thin films of CMOS-compatible sputter deposited aluminum nitride (AlN)-on-silicon. An optical loss of 0.83 dB/cm at = 2.5 mu m is achieved. In addition, an efficient mid-IR 50:50 beam splitter is demonstrated over 200nm spectral bandwidth along with a <2% power difference between adjacent channels. With the inherent advantage of an ultra-wide transparent window (ultraviolent to mid-IR), our AlN mid-IR platform can enable broadband optical networks on a chip.
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