Low temperature Si/Si wafer direct bonding using a plasma activated method

Published 2013 View Full Article

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Title
Low temperature Si/Si wafer direct bonding using a plasma activated method
Authors
Keywords
Low temperature, Wafer direct bonding, O<sub>2</sub> plasma activation, Surface energy, Void formation, TN305.7
Journal
Journal of Zhejiang University-SCIENCE C-Computers & Electronics
Volume 14, Issue 4, Pages 244-251
Publisher
Zhejiang University Press
Online
2013-04-09
DOI
10.1631/jzus.c12mnt02

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