Journal
PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL
Volume 25, Issue 1, Pages 47-50Publisher
ELSEVIER SCIENCE INC
DOI: 10.1016/j.pnsc.2015.01.005
Keywords
Hafnium oxide (HfOx); Resistive switching; Memristor; Multilevel cell (MLC); Synapse
Funding
- NSFC [61404006]
- China Postdoctoral Science Foundation [2014M550013]
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Metal-oxide based electronics synapse is promising for future neuromorphic computation application due to its simple structure and fab-friendly materials. HfOx resistive switching memory has been demonstrated superior performance such as high speed, low voltage, robust reliability, excellent repeatability, and so on. In this work, the HfOx synaptic device was investigated based on its resistive switching phenomenon. HfOx resistive switching device with different electrodes and dopants were fabricated. TiN/Gd:HfOx/Pt stack exhibited the best synaptic performance, including controllable multilevel ability and low training energy consumption. The training schemes for memory and forgetting were developed. (C) 2015 Chinese Materials Research Society. Production and hosting by Elsevier B.V. All rights reserved.
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